Ortech offers cutting-edge CVD Silicon Carbide (SiC) chemical vapor deposition (CVD) processes, delivering top-quality silicon carbide with unparalleled properties. Our CVD silicon carbide (SiC) is engineered to withstand corrosive environments while retaining the exceptional strength, hardness, and wear resistance characteristic of silicon carbide. With a purity level of 99.9995%, our material enables semiconductor manufacturers to achieve ultra-clean production, enhancing efficiency and accelerating production cycles. The combination of excellent thermal, electrical and chemical properties makes CVD silicon carbide SiC well suited to many semiconductor,LED wafer carriers, Sputtering targets and optical applications.
| CVD Silicon Carbide (SiC) | |||
|---|---|---|---|
| Density g/cm3 | 3.20 – 3.24 | ||
| Crystal Structure / | B-SiC 3C | ||
| Surface Roughness um | 0.5 | ||
| Bending Strength Mpa | 49.6 | ||
| Purity | 5N | ||
| Hardness Vickers HV/Gpa | 28.11 | ||
| Thermal Conductivity W/m K (100° C) | 3.43 | ||
| Coefficient if Thermal Expansion 1.0 – 6K – 1 (200°C) | 3.18 |