Ortech Inc. provides state-of-the-art Aluminum Nitride (AlN) manufactured by the most cost-effective processes. Ortech also maintains efficient, large-scale manufacturing facilities that support quick-turn prototype development and high-volume production. AlN has found to replace beryllium oxide (BeO) in the semiconductor industry due to BeO’s toxicity, in addition to the thermal expansion coefficient of AlN is lower than BeO or Alumina, and closely matches that of the Silicon wafers used in electronics. Electronic and structural grades of this material exist, classified as such by the thermal conductivity, which is controlled by the purity of the AlN. Pristine material is white, high-purity is tan, and a gray color indicates contaminants.
| Aluminum Nitride | |||
|---|---|---|---|
| Density g/cm3 | 3.26 | ||
| Crystal Size Average Microns | 3 | ||
| Water Absorption % | 0 | ||
| Gas Permeability – | 0 | ||
| Color – | Gray | ||
| Flexural Strength (MOR) 20° C MPa (psi x 103) | 340 | ||
| Elastic Modulus 20° C GPa (psi x 106) | 330 | ||
| Poisson’s Ratio 20° C – | 0.25 | ||
| Compressive Strength 20° C MPa (psi x 103) | – | ||
| Hardness Rockwell R45N | – | ||
| Tensile Strength 25° C MPa (psi x 103) | – | ||
| Fracture Toughness K(I c) MPam1/2 | 3 | ||
| Thermal Conductivity 20° C W/m K | 180.0 | ||
| Coefficient if Thermal Expansion 25-1000° C 1X 10-6/°C | 5.0 | ||
| Specific Heat 100° C J/kg*K | 740 | ||
| Thermal Shock Resistance Δ Tc °C | – | ||
| Dielectric Strength 6.35mm ac-kV/mm (ac V/mil) | 17 | ||
| Dielectric Constant 1 MHz 25° C | 9 | ||
| Dielectric Loss (tan delta) 1 MHz 25° C | <0.001 | ||
| Volume Resistivity 25° C ohm-cm | |||
| Volume Resistivity 500° C ohm-cm | |||
| Volume Resistivity 1000° C ohm-cm |
